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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 10, Pages 1372–1375
DOI: https://doi.org/10.21883/FTP.2017.10.45015.8507 (Mi phts6020) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation

V. B. Bondarenko, A. V. Filimonov

Peter the Great St. Petersburg Polytechnic University
Full-text PDF (118 kB) Citations (4) English version article
DOI: https://doi.org/10.21883/FTP.2017.10.45015.8507
URL: https://journals.ioffe.ru/ftp/2017/10/page-1372.html.ru
Abstract: The localization behavior of a two-dimensional electron gas confined at the surface of a heavily doped semiconductor under conditions of the “natural” size effect in the space-charge region is investigated. The scattering of low-energy electrons by the chaotic potential formed at the surface by point charges of ionized impurities is analyzed and the electron mean free path is determined. A criterion for strong localization in this two-dimensional electron system is obtained on the basis of the Ioffe–Regel criterion.
Received: 21.02.2017
Accepted: 28.02.2017
English version:
Semiconductors, 2017, Volume 51, Issue 10, Pages 1321–1325
DOI: https://doi.org/10.1134/S1063782617100062
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. B. Bondarenko, A. V. Filimonov, “Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1372–1375; Semiconductors, 51:10 (2017), 1321–1325
Citation in format AMSBIB
\Bibitem{BonFil17}
\by V.~B.~Bondarenko, A.~V.~Filimonov
\paper Criterion for strong localization on a semiconductor surface in the Thomas--Fermi approximation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 10
\pages 1372--1375
\mathnet{http://mi.mathnet.ru/phts6020}
\crossref{https://doi.org/10.21883/FTP.2017.10.45015.8507}
\elib{https://elibrary.ru/item.asp?id=30291325}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 10
\pages 1321--1325
\crossref{https://doi.org/10.1134/S1063782617100062}
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  • https://www.mathnet.ru/eng/phts/v51/i10/p1372
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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