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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 5, Pages 699–703
DOI: https://doi.org/10.21883/FTP.2017.05.44432.8477 (Mi phts6170) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor physics

Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters

L. B. Karlina, A. S. Vlasov, B. Ya. Ber, D. Yu. Kazantsev, N. Kh. Timoshina, M. M. Kulagina, A. B. Smirnov

Ioffe Institute, St. Petersburg
Full-text PDF (391 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2017.05.44432.8477
URL: https://journals.ioffe.ru/ftp/2017/05/page-699.html.ru
Abstract: The comparative characteristics of photovoltaic converters (of laser radiation) based on gallium arsenide with a $p$-type emitter formed by gas-phase diffusion in the presence of surfactants (isovalent impurities) and without them are reported. It is shown that the use of indium and phosphorus in the process of the formation of a $p$–$n$ junction significantly affects the characteristics of the obtained devices.
Received: 12.12.2016
Accepted: 19.12.2016
English version:
Semiconductors, 2017, Volume 51, Issue 5, Pages 667–671
DOI: https://doi.org/10.1134/S1063782617050116
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. B. Karlina, A. S. Vlasov, B. Ya. Ber, D. Yu. Kazantsev, N. Kh. Timoshina, M. M. Kulagina, A. B. Smirnov, “Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 699–703; Semiconductors, 51:5 (2017), 667–671
Citation in format AMSBIB
\Bibitem{KarVlaBer17}
\by L.~B.~Karlina, A.~S.~Vlasov, B.~Ya.~Ber, D.~Yu.~Kazantsev, N.~Kh.~Timoshina, M.~M.~Kulagina, A.~B.~Smirnov
\paper Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 5
\pages 699--703
\mathnet{http://mi.mathnet.ru/phts6170}
\crossref{https://doi.org/10.21883/FTP.2017.05.44432.8477}
\elib{https://elibrary.ru/item.asp?id=29404927}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 5
\pages 667--671
\crossref{https://doi.org/10.1134/S1063782617050116}
Linking options:
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  • https://www.mathnet.ru/eng/phts/v51/i5/p699
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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