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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 3, Pages 317–321
DOI: https://doi.org/10.21883/FTP.2017.03.44200.8267 (Mi phts6202) 		 
This article is cited in 8 scientific papers (total in 8 papers)

Spectroscopy, interaction with radiation

Effect of H$^+$ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region

N. I. Klyuiab, V. B. Lozinskiiab, A. I. Liptugab, V. N. Dikushab, A. P. Oksanychc, M. G. Kogdasc, A. L. Perekhrestc, S. E. Pritchinc

a College of Physics, Jilin University, Changchun, China
b Institute of Semiconductor Physics NAS, Kiev
c Kremenchuk Mykhailo Ostrohradskyi National University, Kremenchug, Ukraine
Full-text PDF (625 kB) Citations (8)
DOI: https://doi.org/10.21883/FTP.2017.03.44200.8267
URL: https://journals.ioffe.ru/ftp/2017/03/page-317.html.ru
Abstract: The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment.
Received: 12.04.2016
Accepted: 20.04.2016
English version:
Semiconductors, 2017, Volume 51, Issue 3, Pages 305–309
DOI: https://doi.org/10.1134/S1063782617030113
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. I. Klyui, V. B. Lozinskii, A. I. Liptuga, V. N. Dikusha, A. P. Oksanych, M. G. Kogdas, A. L. Perekhrest, S. E. Pritchin, “Effect of H$^+$ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 317–321; Semiconductors, 51:3 (2017), 305–309
Citation in format AMSBIB
\Bibitem{KlyLozLip17}
\by N.~I.~Klyui, V.~B.~Lozinskii, A.~I.~Liptuga, V.~N.~Dikusha, A.~P.~Oksanych, M.~G.~Kogdas, A.~L.~Perekhrest, S.~E.~Pritchin
\paper Effect of H$^+$ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 3
\pages 317--321
\mathnet{http://mi.mathnet.ru/phts6202}
\crossref{https://doi.org/10.21883/FTP.2017.03.44200.8267}
\elib{https://elibrary.ru/item.asp?id=29006019}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 3
\pages 305--309
\crossref{https://doi.org/10.1134/S1063782617030113}
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  • https://www.mathnet.ru/eng/phts/v51/i3/p317
    • This publication is cited in the following 8 articles:
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