Specific features of the capacitance–voltage characteristics of a Cu–SiO$_2$–$p$-InSb MIS structure

The capacitance–voltage and conductance–voltage characteristics of InSb-based MIS structures are measured at different probe signal frequencies with the aim of studying the influence exerted by the technological-synthesis conditions on the capacitive properties of these structures. The influence of positive charge built into the insulator on the sample characteristics is discussed. This influence manifests itself as a sharp capacitance “switch” upon changing the polarity of a low-field ($E<$ 10$^6$ V/cm) external signal.