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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor physics
A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum
V. K. Ionychev, A. A. Shesterkina Mordovia State University, Saransk
Abstract:
The statistical delay of microplasma breakdown in GaP light-emitting diodes with the green-emission spectrum is studied. The unusual profound effect of deep centers on the statistical delay of avalanche breakdown is observed in the temperature range of 300–380 K; this effect is caused by a variation in the charge state of these centers due to a reduction in the reverse bias applied to the $p$–$n$ junction. Four deep levels are revealed and their parameters are determined.
Received: 16.02.2016 Accepted: 27.07.2016
Citation:
V. K. Ionychev, A. A. Shesterkina, “A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 386–389; Semiconductors, 51:3 (2017), 370–373
Linking options:
https://www.mathnet.ru/eng/phts6215 https://www.mathnet.ru/eng/phts/v51/i3/p386
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