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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 2, Pages 193–197
DOI: https://doi.org/10.21883/FTP.2017.02.44103.8337 (Mi phts6231) 		 
Surface, interfaces, thin films

Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes

A. S. Len'shin, P. V. Seredin, I. V. Kavetskaya, D. A. Minakov, V. M. Kashkarov

Voronezh State University
Full-text PDF (2260 kB)
DOI: https://doi.org/10.21883/FTP.2017.02.44103.8337
URL: https://journals.ioffe.ru/ftp/2017/02/page-193.html.ru
Abstract: The deposition features of the organic dye Rhodamine B on the porous surface of silicon with average pore sizes of 50–100 and 100–250 nm are studied. Features of the composition and optical properties of the obtained systems are studied using infrared and photoluminescence spectroscopy. It is found that Rhodamine-B adsorption on the surface of $por$-Si with various porosities is preferentially physical. The optimal technological parameters of its deposition are determined.
Received: 25.05.2016
Accepted: 07.07.2016
English version:
Semiconductors, 2017, Volume 51, Issue 2, Pages 184–188
DOI: https://doi.org/10.1134/S1063782617020105
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Len'shin, P. V. Seredin, I. V. Kavetskaya, D. A. Minakov, V. M. Kashkarov, “Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 193–197; Semiconductors, 51:2 (2017), 184–188
Citation in format AMSBIB
\Bibitem{LenSerKav17}
\by A.~S.~Len'shin, P.~V.~Seredin, I.~V.~Kavetskaya, D.~A.~Minakov, V.~M.~Kashkarov
\paper Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 2
\pages 193--197
\mathnet{http://mi.mathnet.ru/phts6231}
\crossref{https://doi.org/10.21883/FTP.2017.02.44103.8337}
\elib{https://elibrary.ru/item.asp?id=29005993}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 2
\pages 184--188
\crossref{https://doi.org/10.1134/S1063782617020105}
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