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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 2, Pages 216–221
DOI: https://doi.org/10.21883/FTP.2017.02.44108.8344
(Mi phts6236)
 

Micro- and nanocrystalline, porous, composite semiconductors

Structural studies of ZnS:Cu (5 at %) nanocomposites in porous Al$_{2}$O$_{3}$ of different thicknesses

R. G. Valeeva, A. L. Trigubab, A. I. Chukavinc, A. N. Beltyukovc

a Physical-Technical Institute Ural Branch of RAS
b National Research Centre "Kurchatov Institute", Moscow
c Physical-Technical Institute of the Ural Branch of the Russian Academy of Sciences
Abstract: We present EXAFS, XANES, and X-ray diffraction data on nanoscale ZnS:Cu (5 at %) structures fabricated by the thermal deposition of a ZnS and Cu powder mixture in porous anodic alumina matrices with a pore diameter of 80 nm and thicknesses of 1, 3, and 5 $\mu$m. The results obtained are compared with data on ZnS:Cu films deposited onto a polycor surface. According to X-ray diffraction data, the samples contain copper and zinc compounds with sulfur (Cu$_2$S and ZnS, respectively); the ZnS compound is in the cubic (sphalerite) and hexagonal (wurtzite) modifications. EXAFS and XANES studies at the K absorption edges of zinc and copper showed that, in samples deposited onto polycor and alumina with thicknesses of 3 and 5 $\mu$m, most copper atoms form the Cu$_2$S compound, while, in the sample deposited onto a 1-$\mu$m-thick alumina layer, copper atoms form metallic particles on the sample surface. Copper crystals affect the Zn–S interatomic distance in the sample with a 1-$\mu$m-thick porous Al$_{2}$O$_{3}$ layer; this distance is smaller than in the other samples.
Received: 06.06.2016
Accepted: 16.06.2016
English version:
Semiconductors, 2017, Volume 51, Issue 2, Pages 207–212
DOI: https://doi.org/10.1134/S1063782617020221
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. G. Valeev, A. L. Trigub, A. I. Chukavin, A. N. Beltyukov, “Structural studies of ZnS:Cu (5 at %) nanocomposites in porous Al$_{2}$O$_{3}$ of different thicknesses”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 216–221; Semiconductors, 51:2 (2017), 207–212
Citation in format AMSBIB
\Bibitem{ValTriChu17}
\by R.~G.~Valeev, A.~L.~Trigub, A.~I.~Chukavin, A.~N.~Beltyukov
\paper Structural studies of ZnS:Cu (5 at \%) nanocomposites in porous Al$_{2}$O$_{3}$ of different thicknesses
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 2
\pages 216--221
\mathnet{http://mi.mathnet.ru/phts6236}
\crossref{https://doi.org/10.21883/FTP.2017.02.44108.8344}
\elib{https://elibrary.ru/item.asp?id=29006000}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 2
\pages 207--212
\crossref{https://doi.org/10.1134/S1063782617020221}
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