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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1595–1598 (Mi phts6276)  
This article is cited in 2 scientific papers (total in 2 papers)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

E. A. Suroveginaa, E. V. Demidova, M. N. Drozdova, A. V. Murela, O. I. Khrykina, V. I. Shashkina, M. A. Lobaevb, A. M. Gorbachevb, A. L. Vikharevb, S. A. Bogdanovb, V. A. Isaevb, A. B. Muchnikovb, V. V. Chernovb, D. B. Radishevb, D. E. Batlerb

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Full-text PDF (297 kB) Citations (2)
URL: https://journals.ioffe.ru/ftp/2016/12/page-1595.html.ru
Abstract: The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 $\times$ 10$^{17}$ to $\sim$10$^{20}$ at cm$^{-3}$ and of $\delta$ doping to the surface concentration (0.3–5) $\times$ 10$^{13}$ at cm$^{-3}$ are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 12, Pages 1569–1573
DOI: https://doi.org/10.1134/S1063782616120204
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Vikharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishev, D. E. Batler, “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1595–1598; Semiconductors, 50:12 (2016), 1569–1573
Citation in format AMSBIB
\Bibitem{SurDemDro16}
\by E.~A.~Surovegina, E.~V.~Demidov, M.~N.~Drozdov, A.~V.~Murel, O.~I.~Khrykin, V.~I.~Shashkin, M.~A.~Lobaev, A.~M.~Gorbachev, A.~L.~Vikharev, S.~A.~Bogdanov, V.~A.~Isaev, A.~B.~Muchnikov, V.~V.~Chernov, D.~B.~Radishev, D.~E.~Batler
\paper Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 12
\pages 1595--1598
\mathnet{http://mi.mathnet.ru/phts6276}
\elib{https://elibrary.ru/item.asp?id=27369056}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 12
\pages 1569--1573
\crossref{https://doi.org/10.1134/S1063782616120204}
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  • https://www.mathnet.ru/eng/phts/v50/i12/p1595
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    This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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