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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1644–1646 (Mi phts6286)  
This article is cited in 1 scientific paper (total in 1 paper)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

I. V. Shtromabc, A. D. Bouravlevabc, Yu. B. Samsonenkobcd, A. I. Khrebtovbd, I. P. Sotnikovabc, R. R. Reznikbde, G. E. Cirlindcb, V. Dhakaf, A. Perrosf, H. Lipsanenf

a Ioffe Institute, St. Petersburg
b Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
d St. Petersburg National Research University of Information Technologies, Mechanics and Optics
e Peter the Great St. Petersburg Polytechnic University
f Aalto University, Finland
Full-text PDF (716 kB) Citations (1)
URL: https://journals.ioffe.ru/ftp/2016/12/page-1644.html.ru
Abstract: It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-$\mathring{\mathrm{A}}$-thick AlN layer.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 12, Pages 1619–1621
DOI: https://doi.org/10.1134/S1063782616120186
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Shtrom, A. D. Bouravlev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Sotnikov, R. R. Reznik, G. E. Cirlin, V. Dhaka, A. Perros, H. Lipsanen, “Surface passivation of GaAs nanowires by the atomic layer deposition of AlN”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1644–1646; Semiconductors, 50:12 (2016), 1619–1621
Citation in format AMSBIB
\Bibitem{ShtBouSam16}
\by I.~V.~Shtrom, A.~D.~Bouravlev, Yu.~B.~Samsonenko, A.~I.~Khrebtov, I.~P.~Sotnikov, R.~R.~Reznik, G.~E.~Cirlin, V.~Dhaka, A.~Perros, H.~Lipsanen
\paper Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 12
\pages 1644--1646
\mathnet{http://mi.mathnet.ru/phts6286}
\elib{https://elibrary.ru/item.asp?id=27369066}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 12
\pages 1619--1621
\crossref{https://doi.org/10.1134/S1063782616120186}
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  • https://www.mathnet.ru/eng/phts6286
  • https://www.mathnet.ru/eng/phts/v50/i12/p1644
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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