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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1679–1684 (Mi phts6293)  
This article is cited in 7 scientific papers (total in 7 papers)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells

V. V. Rumyantsevab, M. A. Fadeevab, S. V. Morozovab, A. A. Dubinovab, K. E. Kudryavtsevab, A. M. Kadykovac, I. V. Tuzovb, S. A. Dvoretskiid, N. N. Mikhailovde, V. I. Gavrilenkoba, F. Teppec

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Laboratoire Charles Coulomb, Universite Montpellier II, Montpellier, France
d Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
e Novosibirsk State University
Full-text PDF (293 kB) Citations (7)
URL: https://journals.ioffe.ru/ftp/2016/12/page-1679.html.ru
Abstract: The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in n-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 $\mu$m occurs at a low threshold pump intensity ($\sim$100 W/cm$^2$) at 20 K. In the $p$-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 12, Pages 1651–1656
DOI: https://doi.org/10.1134/S1063782616120174
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Rumyantsev, M. A. Fadeev, S. V. Morozov, A. A. Dubinov, K. E. Kudryavtsev, A. M. Kadykov, I. V. Tuzov, S. A. Dvoretskii, N. N. Mikhailov, V. I. Gavrilenko, F. Teppe, “Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1679–1684; Semiconductors, 50:12 (2016), 1651–1656
Citation in format AMSBIB
\Bibitem{RumFadMor16}
\by V.~V.~Rumyantsev, M.~A.~Fadeev, S.~V.~Morozov, A.~A.~Dubinov, K.~E.~Kudryavtsev, A.~M.~Kadykov, I.~V.~Tuzov, S.~A.~Dvoretskii, N.~N.~Mikhailov, V.~I.~Gavrilenko, F.~Teppe
\paper Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 12
\pages 1679--1684
\mathnet{http://mi.mathnet.ru/phts6293}
\elib{https://elibrary.ru/item.asp?id=27369073}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 12
\pages 1651--1656
\crossref{https://doi.org/10.1134/S1063782616120174}
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  • https://www.mathnet.ru/eng/phts/v50/i12/p1679
    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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