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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1701–1705 (Mi phts6297)  
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Polarization of the induced THz emission of donors in silicon

K. A. Kovalevskya, R. Kh. Zhukavina, V. V. Tsyplenkova, S. G. Pavlovb, H.-W. Hübersbc, N. V. Abrosimovd, V. N. Shastina

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Humboldt University, Berlin, Germany
c DLR Institute of Optical Sensor Systems, Germany
d Leibniz Institute for Crystal Growth, Berlin, Germany
Full-text PDF (852 kB)
URL: https://journals.ioffe.ru/ftp/2016/12/page-1701.html.ru
Abstract: The polarization of the terahertz (4.9–6.4 THz) stimulated emission of Group-V (Sb, P, As, Bi) donors in single-crystal silicon under pumping (photoionization) by a CO$_2$ laser (photon energy 117 meV), depending on the uniaxial compressive deformation of the crystal along the [100] axis, is experimentally investigated. The influence of the field direction of the pump wave on its efficiency is discussed.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 12, Pages 1673–1677
DOI: https://doi.org/10.1134/S1063782616120101
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, V. N. Shastin, “Polarization of the induced THz emission of donors in silicon”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1701–1705; Semiconductors, 50:12 (2016), 1673–1677
Citation in format AMSBIB
\Bibitem{KovZhuTsy16}
\by K.~A.~Kovalevsky, R.~Kh.~Zhukavin, V.~V.~Tsyplenkov, S.~G.~Pavlov, H.-W.~H\"ubers, N.~V.~Abrosimov, V.~N.~Shastin
\paper Polarization of the induced THz emission of donors in silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 12
\pages 1701--1705
\mathnet{http://mi.mathnet.ru/phts6297}
\elib{https://elibrary.ru/item.asp?id=27369077}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 12
\pages 1673--1677
\crossref{https://doi.org/10.1134/S1063782616120101}
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