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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1706–1712 (Mi phts6298)  
This article is cited in 3 scientific papers (total in 3 papers)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

A. S. Puzanova, S. V. Obolenskya, V. A. Kozlovab

a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (201 kB) Citations (3)
URL: https://journals.ioffe.ru/ftp/2016/12/page-1706.html.ru
Abstract: We analyze the electron transport through the thin base of a GaAs heterojunction bipolar transistor with regard to fluctuations in the spatial distribution of defect clusters induced by irradiation with a fissionspectrum fast neutron flux. We theoretically demonstrate that the homogeneous filling of the working region with radiation-induced defect clusters causes minimum degradation of the dc gain of the heterojunction bipolar transistor.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 12, Pages 1678–1683
DOI: https://doi.org/10.1134/S1063782616120162
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1706–1712; Semiconductors, 50:12 (2016), 1678–1683
Citation in format AMSBIB
\Bibitem{PuzOboKoz16}
\by A.~S.~Puzanov, S.~V.~Obolensky, V.~A.~Kozlov
\paper Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 12
\pages 1706--1712
\mathnet{http://mi.mathnet.ru/phts6298}
\elib{https://elibrary.ru/item.asp?id=27369078}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 12
\pages 1678--1683
\crossref{https://doi.org/10.1134/S1063782616120162}
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  • https://www.mathnet.ru/eng/phts/v50/i12/p1706
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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