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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1441–1444
(Mi phts6303)
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This article is cited in 15 scientific papers (total in 15 papers)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
G. E. Cirlinabc, I. V. Shtromadb, R. R. Reznikae, Yu. B. Samsonenkoab, A. I. Khrebtova, A. D. Bouravlevabd, I. P. Sotnikovabfd a St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, Russia
b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Ioffe Institute, St. Petersburg
e Peter the Great St. Petersburg Polytechnic University
f Saint Petersburg Electrotechnical University "LETI"
Abstract:
Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
G. E. Cirlin, I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, I. P. Sotnikov, “Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1441–1444; Semiconductors, 50:11 (2016), 1421–1424
Linking options:
https://www.mathnet.ru/eng/phts6303 https://www.mathnet.ru/eng/phts/v50/i11/p1441
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