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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1441–1444 (Mi phts6303)  

This article is cited in 15 scientific papers (total in 15 papers)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

G. E. Cirlinabc, I. V. Shtromadb, R. R. Reznikae, Yu. B. Samsonenkoab, A. I. Khrebtova, A. D. Bouravlevabd, I. P. Sotnikovabfd

a St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, Russia
b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Ioffe Institute, St. Petersburg
e Peter the Great St. Petersburg Polytechnic University
f Saint Petersburg Electrotechnical University "LETI"
Abstract: Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 11, Pages 1421–1424
DOI: https://doi.org/10.1134/S1063782616110257
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. E. Cirlin, I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, I. P. Sotnikov, “Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1441–1444; Semiconductors, 50:11 (2016), 1421–1424
Citation in format AMSBIB
\Bibitem{CirShtRez16}
\by G.~E.~Cirlin, I.~V.~Shtrom, R.~R.~Reznik, Yu.~B.~Samsonenko, A.~I.~Khrebtov, A.~D.~Bouravlev, I.~P.~Sotnikov
\paper Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 11
\pages 1441--1444
\mathnet{http://mi.mathnet.ru/phts6303}
\elib{https://elibrary.ru/item.asp?id=27369027}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 11
\pages 1421--1424
\crossref{https://doi.org/10.1134/S1063782616110257}
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  • https://www.mathnet.ru/eng/phts/v50/i11/p1441
  • This publication is cited in the following 15 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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