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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1463–1468 (Mi phts6308)  
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

M. V. Dorokhina, D. A. Pavlovb, A. I. Bobrovb, Yu. A. Danilova, V. P. Lesnikova, B. N. Zvonkova, A. V. Zdoroveyshcheva, A. V. Kudrinb, P. B. Deminaa, Yu. V. Usovb, D. E. Nikolichevb, R. N. Kriukovb, S. Yu. Zubkovb

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Department of Physics, University of Nizhny Novgorod
Full-text PDF (720 kB)
URL: https://journals.ioffe.ru/ftp/2016/11/page-1463.html.ru
Abstract: The crystal structure, composition, and magnetic, and electric-transport properties of Mn$_{x}$Ga$_{y}$ layers deposited onto a GaAs surface by pulsed laser deposition in a hydrogen atmosphere, pulsed laser deposition in vacuum, and electron-beam evaporation in vacuum are investigated. It is shown that the features of each technique affect the composition and crystal structure of the formed layers, and the degree of abruptness and crystalline quality of the heterointerface. Apparently, the composition and crystal structure are responsible for modification of the ferromagnetic properties. The defects in the heterointerface affect the properties of the Mn$_{x}$Ga$_{y}$/GaAs diode structure, in particular, the height of the Schottky diode potential barrier.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 11, Pages 1443–1448
DOI: https://doi.org/10.1134/S1063782616110087
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, V. P. Lesnikov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, P. B. Demina, Yu. V. Usov, D. E. Nikolichev, R. N. Kriukov, S. Yu. Zubkov, “Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1463–1468; Semiconductors, 50:11 (2016), 1443–1448
Citation in format AMSBIB
\Bibitem{DorPavBob16}
\by M.~V.~Dorokhin, D.~A.~Pavlov, A.~I.~Bobrov, Yu.~A.~Danilov, V.~P.~Lesnikov, B.~N.~Zvonkov, A.~V.~Zdoroveyshchev, A.~V.~Kudrin, P.~B.~Demina, Yu.~V.~Usov, D.~E.~Nikolichev, R.~N.~Kriukov, S.~Yu.~Zubkov
\paper Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 11
\pages 1463--1468
\mathnet{http://mi.mathnet.ru/phts6308}
\elib{https://elibrary.ru/item.asp?id=27369032}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 11
\pages 1443--1448
\crossref{https://doi.org/10.1134/S1063782616110087}
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