Dielectric properties of layered FeGaInS$_{4}$ single crystals in an alternating electric field

The results of investigations of the frequency and temperature dependences of dielectric losses and the imaginary part of the dielectric permittivity in FeGaInS$_{4}$ single crystals are presented. Their experimental values are determined. It is established that the loss tangent and the imaginary part of the permittivity of FeGaInS$_{4}$ single crystals in a field with frequencies of 10$^4$–10$^6$ Hz decrease inversely proportional to the frequency $(\operatorname{tg}\delta\sim1/\omega)$, and the conductivity is characterized by the band–hopping mechanism. For FeGaInS$_{4}$, the relaxation time is calculated, and it is established that there is a mechanism of electron polarization caused by thermal motion in this crystal.