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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9, Pages 1283–1294 (Mi phts6376)  
Manufacturing, processing, testing of materials and structures

Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

P. V. Seredina, D. L. Goloshchapova, A. S. Len'shina, A. N. Lukina, A. V. Fedyukina, I. N. Arsent'evb, A. D. Bondarevb, Ya. V. Lubyanskiyb, I. S. Tarasovb

a Voronezh State University
b Ioffe Institute, St. Petersburg
Full-text PDF (880 kB)
URL: https://journals.ioffe.ru/ftp/2016/09/page-1283.html.ru
Abstract: Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films can have a refractive index in the range of 1.6–4.0 at a wavelength of $\sim$250 nm and an optical band gap of $\sim$5 eV. It is shown that the morphology, surface composition, and optical characteristics of AlN/GaAs heterophase systems can be controlled using misoriented GaAs substrates.
Received: 02.03.2016
Accepted: 03.03.2016
English version:
Semiconductors, 2016, Volume 50, Issue 9, Pages 1261–1272
DOI: https://doi.org/10.1134/S1063782616090219
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. V. Seredin, D. L. Goloshchapov, A. S. Len'shin, A. N. Lukin, A. V. Fedyukin, I. N. Arsent'ev, A. D. Bondarev, Ya. V. Lubyanskiy, I. S. Tarasov, “Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1283–1294; Semiconductors, 50:9 (2016), 1261–1272
Citation in format AMSBIB
\Bibitem{SerGolLen16}
\by P.~V.~Seredin, D.~L.~Goloshchapov, A.~S.~Len'shin, A.~N.~Lukin, A.~V.~Fedyukin, I.~N.~Arsent'ev, A.~D.~Bondarev, Ya.~V.~Lubyanskiy, I.~S.~Tarasov
\paper Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 9
\pages 1283--1294
\mathnet{http://mi.mathnet.ru/phts6376}
\elib{https://elibrary.ru/item.asp?id=27369002}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 9
\pages 1261--1272
\crossref{https://doi.org/10.1134/S1063782616090219}
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