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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 8, Pages 1016–1020 (Mi phts6378)  
This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Temperature dependence of the hall coefficient in the Вi$_{1-x}$Sb$_{x}$ system ($x$ = 0.06, 0.12)

B. A. Tairov, H. A. Gasanova, R. I. Selim-zade

Abdullaev Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
Full-text PDF (542 kB) Citations (1)
URL: https://journals.ioffe.ru/ftp/2016/08/page-1016.html.ru
Abstract: The temperature dependences of the Fermi level, concentrations of charge carriers, and their effective mass ratio in the Вi$_{1-x}$Sb$_{x}$ system ($x$ = 0.06, 0.12) are determined on the basis of quantitative analysis of the temperature dependence of the Hall coefficient in the temperature range of 77–300 K.
Received: 01.12.2015
Accepted: 17.12.2015
English version:
Semiconductors, 2016, Volume 50, Issue 8, Pages 996–1000
DOI: https://doi.org/10.1134/S1063782616080248
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. A. Tairov, H. A. Gasanova, R. I. Selim-zade, “Temperature dependence of the hall coefficient in the Вi$_{1-x}$Sb$_{x}$ system ($x$ = 0.06, 0.12)”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1016–1020; Semiconductors, 50:8 (2016), 996–1000
Citation in format AMSBIB
\Bibitem{TaiGasSel16}
\by B.~A.~Tairov, H.~A.~Gasanova, R.~I.~Selim-zade
\paper Temperature dependence of the hall coefficient in the Вi$_{1-x}$Sb$_{x}$ system ($x$ = 0.06, 0.12)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 8
\pages 1016--1020
\mathnet{http://mi.mathnet.ru/phts6378}
\elib{https://elibrary.ru/item.asp?id=27368953}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 8
\pages 996--1000
\crossref{https://doi.org/10.1134/S1063782616080248}
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  • https://www.mathnet.ru/eng/phts/v50/i8/p1016
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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