Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 8, Pages 1030–1035 (Mi phts6381)  
This article is cited in 15 scientific papers (total in 15 papers)

Surface, interfaces, thin films

Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma

Kh. A. Abdullina, M. T. Gabdullina, L. V. Gritsenkob, D. V. Ismailova, Zh. K. Kalkozovaa, S. E. Kumekovb, Zh. O. Mukashb, A. Yu. Sazonovc, E. I. Terukovd

a National Nanotechnology Laboratory of open type, al-Farabi KazNU, Almaty, Kazakhstan
b Kazakh National Technical University after K. I. Satpaev, Almaty, Kazakhstan
c University of Waterloo, Waterloo, Canada
d Ioffe Institute, St. Petersburg
Full-text PDF (517 kB) Citations (15)
URL: https://journals.ioffe.ru/ftp/2016/08/page-1030.html.ru
Abstract: The photoluminescence and optical absorption spectra and electrical properties of ZnO films grown by the metal–organic chemical vapor deposition and hydrothermal techniques, subjected to heat treatments and plasma treatment in a hydrogen atmosphere, are studied. It is shown that the adsorption of oxygen at grain boundaries upon annealing in an oxidizing atmosphere determines the electrical properties of the films. Vacuum annealing improves the electrical properties of the samples after degradation induced by annealing in air. Treatment in hydrogen plasma passivates surface states at the grain boundaries. The intrinsic photoluminescence intensity after plasma treatment is higher in the case of increased amounts of oxygen adsorbed at grain surfaces upon annealing in air. Surface states involving oxygen and hydrogen atoms are responsible for the high-intensity intrinsic photoluminescence band.
Received: 18.01.2016
Accepted: 25.01.2016
English version:
Semiconductors, 2016, Volume 50, Issue 8, Pages 1010–1014
DOI: https://doi.org/10.1134/S1063782616080029
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Kh. A. Abdullin, M. T. Gabdullin, L. V. Gritsenko, D. V. Ismailov, Zh. K. Kalkozova, S. E. Kumekov, Zh. O. Mukash, A. Yu. Sazonov, E. I. Terukov, “Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1030–1035; Semiconductors, 50:8 (2016), 1010–1014
Citation in format AMSBIB
\Bibitem{AbdGabGri16}
\by Kh.~A.~Abdullin, M.~T.~Gabdullin, L.~V.~Gritsenko, D.~V.~Ismailov, Zh.~K.~Kalkozova, S.~E.~Kumekov, Zh.~O.~Mukash, A.~Yu.~Sazonov, E.~I.~Terukov
\paper Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 8
\pages 1030--1035
\mathnet{http://mi.mathnet.ru/phts6381}
\elib{https://elibrary.ru/item.asp?id=27368956}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 8
\pages 1010--1014
\crossref{https://doi.org/10.1134/S1063782616080029}
Linking options:
  • https://www.mathnet.ru/eng/phts6381
  • https://www.mathnet.ru/eng/phts/v50/i8/p1030
    • This publication is cited in the following 15 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025