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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 447–453 (Mi phts6483)  

This article is cited in 4 scientific papers (total in 4 papers)

Electronic properties of semiconductors

Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation

A. N. Akimov, A. E. Klimov, I. G. Neizvestnyi, V. N. Shumskii, V. S. Epov

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (333 kB) Citations (4)
Abstract: The time dependences of variations in the photoconductivity of PbSnTe:In films in the range of $T\approx$ 19–25 K upon interband excitation are studied. It is found that the character of conductivity relaxation after switch-off of illumination depends on the duration and intensity of the preceding illumination. In this case, the characteristic times of relaxation for various modes of illumination can differ by more than an order of magnitude. The obtained results are discussed in the context of a model assuming the presence of a quasicontinuous spectrum of capture levels in the band gap of PbSnTe:In and also a possible effect on the parameters of these levels of the ferroelectric phase transition, the temperature of which is found to be in the temperature range under study.
Keywords: Topological Insulator, Trapping Center, Ferroelectric Phase Transition, Trap Level, Optical Generation.
Received: 17.09.2015
Accepted: 21.09.2015
English version:
Semiconductors, 2016, Volume 50, Issue 4, Pages 440–446
DOI: https://doi.org/10.1134/S1063782616040023
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. N. Akimov, A. E. Klimov, I. G. Neizvestnyi, V. N. Shumskii, V. S. Epov, “Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 447–453; Semiconductors, 50:4 (2016), 440–446
Citation in format AMSBIB
\Bibitem{AkiKliNei16}
\by A.~N.~Akimov, A.~E.~Klimov, I.~G.~Neizvestnyi, V.~N.~Shumskii, V.~S.~Epov
\paper Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 4
\pages 447--453
\mathnet{http://mi.mathnet.ru/phts6483}
\elib{https://elibrary.ru/item.asp?id=25668233}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 4
\pages 440--446
\crossref{https://doi.org/10.1134/S1063782616040023}
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  • https://www.mathnet.ru/eng/phts/v50/i4/p447
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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