On the thermoelectric properties and band gap of silicon–germanium alloys in the high-temperature region

For $n$- and $p$-type Si$_{0.85}$Ge$_{0.15}$ alloys, the thermoelectric properties (thermopower, resistivity, thermal conductivity, and thermoelectric efficiency) are determined in the range from room temperature to 1200$^\circ$C. The measurements are carried out with an upgraded device [1] by absolute and steady-state methods with thermal screens. The device is upgraded to extend the working-temperature range to $\sim$1500 K. On the basis of these data, the energy-related capabilities of the alloy are estimated; the thermal band-gap width is calculated in the temperature range of $\sim$1300–1400 K.