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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 557–562 (Mi phts6501)  

This article is cited in 1 scientific paper (total in 1 paper)

Manufacturing, processing, testing of materials and structures

Optical and structural properties of Cu$_{2}$ZnSnS$_{4}$ thin films obtained by pulsed laser deposition in a H$_{2}$S atmosphere with subsequent annealing in a N$_{2}$ atmosphere.

G. D. Teterinaa, V. N. Nevolinbc, I. P. Sipayloc, S. S. Medvedevad, P. E. Teterinc

a Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region
b P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
c National Engineering Physics Institute "MEPhI", Moscow
d Immanuel Kant Baltic Federal University, Kaliningrad
Full-text PDF (654 kB) Citations (1)
Abstract: The structural and optical properties of Cu$_{2}$ZnSnS$_{4}$ thin-film layers formed by reactive pulsed laser deposition in a H$_{2}$S atmosphere at room temperature with the use of a Cu metal target and a Zn–Sn alloy target are studied in relation to the parameters of annealing in a N$_{2}$ atmosphere.
Keywords: Pulse Laser Deposition, Rapid Thermal Annealing, Pulse Laser Deposition Technique, CZTS Film, Thin Sulfide Film.
Received: 24.09.2015
Accepted: 06.10.2015
English version:
Semiconductors, 2016, Volume 50, Issue 4, Pages 549–554
DOI: https://doi.org/10.1134/S1063782616040229
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. D. Teterina, V. N. Nevolin, I. P. Sipaylo, S. S. Medvedeva, P. E. Teterin, “Optical and structural properties of Cu$_{2}$ZnSnS$_{4}$ thin films obtained by pulsed laser deposition in a H$_{2}$S atmosphere with subsequent annealing in a N$_{2}$ atmosphere.”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 557–562; Semiconductors, 50:4 (2016), 549–554
Citation in format AMSBIB
\Bibitem{TetNevSip16}
\by G.~D.~Teterina, V.~N.~Nevolin, I.~P.~Sipaylo, S.~S.~Medvedeva, P.~E.~Teterin
\paper Optical and structural properties of Cu$_{2}$ZnSnS$_{4}$ thin films obtained by pulsed laser deposition in a H$_{2}$S atmosphere with subsequent annealing in a N$_{2}$ atmosphere.
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 4
\pages 557--562
\mathnet{http://mi.mathnet.ru/phts6501}
\elib{https://elibrary.ru/item.asp?id=25668290}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 4
\pages 549--554
\crossref{https://doi.org/10.1134/S1063782616040229}
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  • https://www.mathnet.ru/eng/phts/v50/i4/p557
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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