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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 241–244 (Mi phts6545)  
This article is cited in 11 scientific papers (total in 11 papers)

Semiconductor physics

Si:Si LEDs with room-temperature dislocation-related luminescence

N. A. Soboleva, A. E. Kalyadina, M. V. Konovalova, P. N. Arueva, V. V. Zabrodskiia, E. I. Sheka, K. F. Shtel'makhab, A. N. Mikhaylovc, D. I. Tetelbaumc

a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c Lobachevsky State University of Nizhny Novgorod
Full-text PDF (271 kB) Citations (11)
URL: https://journals.ioffe.ru/ftp/2016/02/page-241.html.ru
Abstract: Silicon-based light-emitting diodes (LEDs) fabricated by the Si-ion implantation and chemical-vapor deposition methods are studied. Room-temperature dislocation-related electroluminescence (EL) is observed in LEDs based on $n$-Si. In LEDs based on $p$-Si, the EL is quenched at temperatures higher than 220 K. The EL-excitation efficiencies are measured for the $D$1 line at room temperature and the $D$1 and $D$4 lines at liquid-nitrogen temperature.
Keywords: Polycrystalline Silicon, Solid State Phenom, Peak Energy Position, Direct Wafer Bonding, Pump Current Density.
Received: 04.06.2015
Accepted: 12.06.2015
English version:
Semiconductors, 2016, Volume 50, Issue 2, Pages 240–243
DOI: https://doi.org/10.1134/S1063782616020238
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Sobolev, A. E. Kalyadin, M. V. Konovalov, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, K. F. Shtel'makh, A. N. Mikhaylov, D. I. Tetelbaum, “Si:Si LEDs with room-temperature dislocation-related luminescence”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 241–244; Semiconductors, 50:2 (2016), 240–243
Citation in format AMSBIB
\Bibitem{SobKalKon16}
\by N.~A.~Sobolev, A.~E.~Kalyadin, M.~V.~Konovalov, P.~N.~Aruev, V.~V.~Zabrodskii, E.~I.~Shek, K.~F.~Shtel'makh, A.~N.~Mikhaylov, D.~I.~Tetelbaum
\paper Si:Si LEDs with room-temperature dislocation-related luminescence
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 2
\pages 241--244
\mathnet{http://mi.mathnet.ru/phts6545}
\elib{https://elibrary.ru/item.asp?id=25668111}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 2
\pages 240--243
\crossref{https://doi.org/10.1134/S1063782616020238}
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  • https://www.mathnet.ru/eng/phts/v50/i2/p241
    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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