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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 83–88
(Mi phts6566)
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This article is cited in 9 scientific papers (total in 9 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry
M. O. Makeev, Yu. A. Ivanov, S. A. Meshkov Bauman Moscow State Technical University
Abstract:
A technique for assessing the quality of AlAs/GaAs nanoscale resonant-tunneling heterostructures from the viewpoint of their resistance to diffusion destruction is developed. The diffusive spreading of AlAs/GaAs heterostructure layers is revealed by infrared (IR) spectral ellipsometry and the Al and Si diffusion coefficients in GaAs are determined.
Received: 17.03.2015 Accepted: 03.04.2015
Citation:
M. O. Makeev, Yu. A. Ivanov, S. A. Meshkov, “Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 83–88; Semiconductors, 50:1 (2016), 83–88
Linking options:
https://www.mathnet.ru/eng/phts6566 https://www.mathnet.ru/eng/phts/v50/i1/p83
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