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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 106–111 (Mi phts6570)  
This article is cited in 10 scientific papers (total in 10 papers)

Semiconductor physics

Photodetectors based on CuInS$_2$

S. V. Bulyarskiia, L. N. Vostretsovaa, S. A. Gavrilovb

a Ulyanovsk State University
b National Research University of Electronic Technology
Full-text PDF (291 kB) Citations (10)
URL: https://journals.ioffe.ru/ftp/2016/01/page-106.html.ru
Abstract: It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS$_2$ and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 $\times$ 10$^{16}$ cm$^{-2}$.
Received: 23.03.2015
Accepted: 30.03.2015
English version:
Semiconductors, 2016, Volume 50, Issue 1, Pages 106–111
DOI: https://doi.org/10.1134/S1063782616010061
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Bulyarskii, L. N. Vostretsova, S. A. Gavrilov, “Photodetectors based on CuInS$_2$”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 106–111; Semiconductors, 50:1 (2016), 106–111
Citation in format AMSBIB
\Bibitem{BulVosGav16}
\by S.~V.~Bulyarskii, L.~N.~Vostretsova, S.~A.~Gavrilov
\paper Photodetectors based on CuInS$_2$
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 1
\pages 106--111
\mathnet{http://mi.mathnet.ru/phts6570}
\elib{https://elibrary.ru/item.asp?id=25668046 }
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 1
\pages 106--111
\crossref{https://doi.org/10.1134/S1063782616010061}
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  • https://www.mathnet.ru/eng/phts/v50/i1/p106
    • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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