RF performance investigation of NiO pocket on Ga$_2$O$_3$-based hetero-MOSFET

In this paper, the performance of $p$-type NiO pocket on Ga$_2$O$_3$/Graphene and Ga$_2$O$_3$/Black phosphorous hetero-MOSFET has been investigated to find out its applicability in the wireless applications. To show the utility of the proposed devices, its analog/RF characteristics have been studied and compared to those of the experimentally demonstrated conventional Ga$_2$O$_3$ MOSFET. The large signal RF performances analysis has also been carried out by considering CW Class-A power measurements at 0.8 GHz using passive source and load tuning. The important figure of merits (FOMs) used in the analysis are intrinsic capacitances $C_{\mathrm{GS}}$ and $C_{\mathrm{GD}}$, cutoff frequency $f_{\mathrm{T}}$, output power gain GP, and power-added efficiency. The key idea behind this work is to propose a device which is efficient and shows low leakage current. All the analysis of proposed devices has been carried out using ATLAS TCAD simulator.