Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12, Page 1405 (Mi phts6704)  
NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Spin Related Phenomena in Nanostructures

Floquet engineering of structures based on gapless semiconductors

O. V. Kibisa, M. V. Boevb, V. M. Kovalevc, R. E. Sinitskyia, I. A. Shelykhd

a Department of Applied and Theoretical Physics, Novosibirsk State Technical University, 630073 Novosibirsk, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
c Science Institute, University of Iceland, Dunhagi 3, IS-107, Reykjavik, Iceland
d ITMO University, 197101 St. Petersburg, Russia
Full-text PDF (26 kB)
Abstract: Applying the conventional Floquet theory of periodically driven quantum systems, we developed the theory of optical control of structures based on gapless semiconductors. It is demonstrated that electronic properties of the structures crucially depends on irradiation. Particularly, irradiation by a circularly polarized electromagnetic wave lifts spin degeneracy of electronic bands and induces surface electronic states. Thus, a high-frequency off-resonant electromagnetic field can serve as an effective tool to control electronic characteristics of the structures and be potentially exploited in optoelectronic applications of them.
Keywords: Floquet systems, gapless semiconductors.
Funding agency Grant number
Russian Foundation for Basic Research 20-02-00084
The reported study was funded by Russian Foundation for Basic Research (project no. 20-02-00084).
Received: 23.06.2020
Revised: 23.07.2020
Accepted: 27.07.2020
English version:
Semiconductors, 2020, Volume 54, Issue 12, Pages 1734–1736
DOI: https://doi.org/10.1134/S1063782620120143
Document Type: Article
Language: English
Citation: O. V. Kibis, M. V. Boev, V. M. Kovalev, R. E. Sinitskyi, I. A. Shelykh, “Floquet engineering of structures based on gapless semiconductors”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1405; Semiconductors, 54:12 (2020), 1734–1736
Citation in format AMSBIB
\Bibitem{KibBoeKov20}
\by O.~V.~Kibis, M.~V.~Boev, V.~M.~Kovalev, R.~E.~Sinitskyi, I.~A.~Shelykh
\paper Floquet engineering of structures based on gapless semiconductors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 12
\pages 1405
\mathnet{http://mi.mathnet.ru/phts6704}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 12
\pages 1734--1736
\crossref{https://doi.org/10.1134/S1063782620120143}
Linking options:
  • https://www.mathnet.ru/eng/phts6704
  • https://www.mathnet.ru/eng/phts/v54/i12/p1405
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025