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Fizika i Tekhnika Poluprovodnikov, 2024, Volume 58, Issue 7, Pages 370–375 DOI: https://doi.org/10.61011/FTP.2024.07.59180.6335H
(Mi phts6766)
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XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, 11-15 March 2024
$\beta\Longleftrightarrow\beta'$ phase transition with temperature hysteresis in In$_2$Se$_3$ films
S. A. Ponomarevab, N. N. Kurusa, V. A. Golyashova, A. Yu. Mironova, D. I. Rogiloa, A. G. Milekhina, D. V. Shcheglova, A. V. Latyshevab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State University, Novosibirsk, Russia
DOI:
https://doi.org/10.61011/FTP.2024.07.59180.6335H
Abstract:
The temperature dependences of Raman scattering for In$_2$Se$_3$ films were measured during cooling to the liquid nitrogen temperature and subsequent heating to the room temperature. The Raman spectra show a reversible $\beta$-In$_2$Se$_3\Longleftrightarrow \beta'$-In$_2$Se$_3$ phase transition with hysteresis in the range of 140–180 K previously discovered by a change in the atomic structure of the surface and the sharp decrease in electrical resistance by a factor of $\sim$10$^4$ during the cooling. The ARPES measurements display changes in film's band structure corresponding to this phase transition.
Keywords:
phase transition, In$_2$Se$_3$, hysteresis, arpes, resistance, Raman scattering.
Received: 19.04.2024 Revised: 26.09.2024 Accepted: 26.09.2024
Citation:
S. A. Ponomarev, N. N. Kurus, V. A. Golyashov, A. Yu. Mironov, D. I. Rogilo, A. G. Milekhin, D. V. Shcheglov, A. V. Latyshev, “$\beta\Longleftrightarrow\beta'$ phase transition with temperature hysteresis in In$_2$Se$_3$ films”, Fizika i Tekhnika Poluprovodnikov, 58:7 (2024), 370–375
Linking options:
https://www.mathnet.ru/eng/phts6766 https://www.mathnet.ru/eng/phts/v58/i7/p370
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| Abstract page: | 91 | | Full-text PDF : | 43 |
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