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Fizika i Tekhnika Poluprovodnikov, 2023, Volume 57, Issue 1, Pages 42–52
DOI: https://doi.org/10.21883/FTP.2023.01.54929.4338 (Mi phts6832) 		 
Semiconductor physics

On heating mechanisms in LEDs based on $p$-InAsSbP/$n$-InAs(Sb)

A. L. Zakhgeima, S. A. Karandashovb, A. A. Klimovb, R. È. Kunkovb, T. S. Lukhmyrinab, B. A. Matveevb, M. A. Remennyib, A. A. Usikovab, A. E. Chernyakova

a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, 194021 St. Petersburg, Russia
Full-text PDF (938 kB)
DOI: https://doi.org/10.21883/FTP.2023.01.54929.4338
Abstract: Three main reasons for a temperature increase in activated $p$-InAsSbP/$n$-InAs/$n$-InAsSbP and $p$-InAsSbP/$n$-InAsSb/$n$-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1$\times$3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics.
Keywords: IR LED, IR diode array, Joule heating, Auger recombination, electron-phonon interaction.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation 075-15-2021-936
Part of the work performed in the Ioffe Institute of RAS, namely, the study of samples with an active region from InAs described in Section 2.1, was supported by the Ministry of Science and Higher Education of the Russian Federation (project “Embedded Electronic Solutions for Innovative Scanning Devices for Polymer Diagnostics Based on Radiation Sources” (No. RF 225121X0001, agreement – 075-15-2021-936).
Received: 18.11.2022
Revised: 25.12.2022
Accepted: 25.12.2022
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. L. Zakhgeim, S. A. Karandashov, A. A. Klimov, R. È. Kunkov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, A. E. Chernyakov, “On heating mechanisms in LEDs based on $p$-InAsSbP/$n$-InAs(Sb)”, Fizika i Tekhnika Poluprovodnikov, 57:1 (2023), 42–52
Citation in format AMSBIB
\Bibitem{ZakKarKli23}
\by A.~L.~Zakhgeim, S.~A.~Karandashov, A.~A.~Klimov, R.~\`E.~Kunkov, T.~S.~Lukhmyrina, B.~A.~Matveev, M.~A.~Remennyi, A.~A.~Usikova, A.~E.~Chernyakov
\paper On heating mechanisms in LEDs based on $p$-InAsSbP/$n$-InAs(Sb)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2023
\vol 57
\issue 1
\pages 42--52
\mathnet{http://mi.mathnet.ru/phts6832}
\crossref{https://doi.org/10.21883/FTP.2023.01.54929.4338}
\elib{https://elibrary.ru/item.asp?id=50399145}
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