Effect of proton irradiation on the properties of high-voltage integrated 4$H$-SiC Schottky diodes at operating temperatures

The effect of proton irradiation (proton energy 15 MeV) on the parameters of high-voltage 4$H$-SiC integrated Schottky diodes (JBS) was studied for the first time in the operating temperature range $T_i$ (23 and 175$^\circ$C). The blocking voltage of the diodes under study, $U_b$, was 600 and 1700 V. For devices with $U_b$ = 600 V, the fluence range was 5$\cdot$10$^{13}$–1$\cdot$10$^{14}$ cm$^{-2}$; for devices with $U_b$ = 1700 V, the fluence range was 3$\cdot$10$^{13}$–6$\cdot$10$^{13}$ cm$^{-2}$. An increase in the irradiation temperature leads to a noticeable decrease in the effect of irradiation on the current-voltage characteristics of the diodes. The effect of annealing on the current-voltage characteristics of irradiated devices is studied.