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Fizika i Tekhnika Poluprovodnikov, 2023, Volume 57, Issue 5, Pages 332–337
DOI: https://doi.org/10.21883/FTP.2023.05.56199.26k (Mi phts6878) 		 
XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, 13 - 16 March 2023

Formation of InAs nanoislands on silicon surfaces and heterostructures based on them

I. V. Ilkivab, V. V. Lendyashovaac, B. B. Borodinc, V. G. Talalaevd, T. M. Shugabaeva, R. R. Reznikb, G. È. Cirlinabe

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
b Saint Petersburg State University, 199034 St. Petersburg, Russia
c Ioffe Institute, 194021 St. Petersburg, Russia
d Martin Luther University Halle-Wittenberg, 06108 Halle, Germany
e ITMO University, 197101 St. Petersburg, Russia
Full-text PDF (460 kB)
DOI: https://doi.org/10.21883/FTP.2023.05.56199.26k
Abstract: Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 $\mu$m, was showed.
Keywords: quantum dots, molecular beam epitaxy, semiconductors, silicon, heterostructures.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation 0791-2023-0004
FSER-2020-0013
Saint Petersburg State University 94033852
This study was supported financially by the Ministry of Science and Higher Education of the Russian Federation (0791-2023-0004). Optical measurements were conducted within research grant of SPb State University No. 94033852. The investigation of morphology of InAs-islands was supported by the Ministry of Science and Higher Education of the Russian Federation, research project No. 2019-1442 (research topic code FSER-2020-0013).
Received: 05.05.2023
Revised: 29.06.2023
Accepted: 06.07.2023
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Ilkiv, V. V. Lendyashova, B. B. Borodin, V. G. Talalaev, T. M. Shugabaev, R. R. Reznik, G. È. Cirlin, “Formation of InAs nanoislands on silicon surfaces and heterostructures based on them”, Fizika i Tekhnika Poluprovodnikov, 57:5 (2023), 332–337
Citation in format AMSBIB
\Bibitem{IlkLenBor23}
\by I.~V.~Ilkiv, V.~V.~Lendyashova, B.~B.~Borodin, V.~G.~Talalaev, T.~M.~Shugabaev, R.~R.~Reznik, G.~\`E.~Cirlin
\paper Formation of InAs nanoislands on silicon surfaces and heterostructures based on them
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2023
\vol 57
\issue 5
\pages 332--337
\mathnet{http://mi.mathnet.ru/phts6878}
\crossref{https://doi.org/10.21883/FTP.2023.05.56199.26k}
\elib{https://elibrary.ru/item.asp?id=55811595}
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