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XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, 13 - 16 March 2023
Top-down formation of biocompatible SiC nanotubes
A. D. Bouravlevabcd, A. N. Kazakine, Yu. A. Nashchekinacf, A. V. Nashchekinc, E. V. Ubyivovkgch, V. A. Astrahancevaa, A. V. Osipovh, G. V. Svyatetsi, S. A. Kukushkinh a Saint Petersburg Electrotechnical University "LETI", 197022 St. Petersburg, Russia
b AN HEO "University associated with IA EAEC",
194044 St. Petersburg, Russia
c Ioffe Institute, 194021 St. Petersburg, Russia
d Institute for Analytical Instrumentation, Russian Academy of Sciences, 198095 St. Petersburg, Russia
e Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
f Institute of Cytology Russian Academy of Science, 194064 St. Petersburg, Russia
g Saint Petersburg State University, 198504 St. Petersburg, Russia
h Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178 St. Petersburg, Russia
i OOO Scientific and Technical Center "New Technologies", 195027 St. Petersburg, Russia
Abstract:
It was found that the synthesis of silicon carbide epitaxial layers on silicon by coordinated substitution of atoms can be accompanied by the formation of silicon carbide nanotubes growing deep into silicon substrates. That is, for the first time discovered a new “top-down” mechanism for the formation of silicon carbide nanotubes.
Keywords:
silicon carbide, nanotubes, vapor-liquid-crystal, nanostructure formation.
Received: 05.05.2023 Revised: 29.06.2023 Accepted: 06.07.2023
Citation:
A. D. Bouravlev, A. N. Kazakin, Yu. A. Nashchekina, A. V. Nashchekin, E. V. Ubyivovk, V. A. Astrahanceva, A. V. Osipov, G. V. Svyatets, S. A. Kukushkin, “Top-down formation of biocompatible SiC nanotubes”, Fizika i Tekhnika Poluprovodnikov, 57:5 (2023), 343–347
Linking options:
https://www.mathnet.ru/eng/phts6880 https://www.mathnet.ru/eng/phts/v57/i5/p343
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