A. S. Vlasov, K. M. Afanasev, A. I. Galimov, N. A. Kalyuzhnyy, D. V. Lebedev, A. V. Malevskaya, S. A. Mintairov, M. V. Rakhlin, R. A. Salii, A. M. Mozharov, I. S. Mukhin, A. M. Mintairov, “Selective area epitaxy of InP/GaInP$_2$ quantum dots from metal-organic compounds”, Fizika i Tekhnika Poluprovodnikov, 57:8 (2023), 620

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Fizika i Tekhnika Poluprovodnikov, 2023, Volume 57, Issue 8, Pages 620–623
DOI: https://doi.org/10.61011/FTP.2023.08.56955.5049C (Mi phts6932)

International Physics Conference, St. Petersburg, October 23-27, 2023, St. Petersburg

Selective area epitaxy of InP/GaInP$_2$ quantum dots from metal-organic compounds

A. S. Vlasov^a, K. M. Afanasev^a, A. I. Galimov^a, N. A. Kalyuzhnyy^a, D. V. Lebedev^a, A. V. Malevskaya^a, S. A. Mintairov^a, M. V. Rakhlin^a, R. A. Salii^a, A. M. Mozharov^b, I. S. Mukhin^b, A. M. Mintairov^ac

^a Ioffe Institute, 194021 St. Petersburg, Russia
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
^c University of Notre Dame, Indiana, USA 46556

Full-text PDF (924 kB)

DOI: https://doi.org/10.61011/FTP.2023.08.56955.5049C

Abstract: Experiments on the growth of self-assembled InP/GaInP$_2$ quantum dots in dielectric mask 0.1–1 $\mu$m apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO$_2$ and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.

Keywords: InP quantum dots, selective area epitaxy, MOVPE epitaxy.

Received: 11.05.2023
Revised: 21.07.2023
Accepted: 30.10.2023

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: A. S. Vlasov, K. M. Afanasev, A. I. Galimov, N. A. Kalyuzhnyy, D. V. Lebedev, A. V. Malevskaya, S. A. Mintairov, M. V. Rakhlin, R. A. Salii, A. M. Mozharov, I. S. Mukhin, A. M. Mintairov, “Selective area epitaxy of InP/GaInP$_2$ quantum dots from metal-organic compounds”, Fizika i Tekhnika Poluprovodnikov, 57:8 (2023), 620–623

Citation in format AMSBIB

\Bibitem{VlaAfaGal23}

\by A.~S.~Vlasov, K.~M.~Afanasev, A.~I.~Galimov, N.~A.~Kalyuzhnyy, D.~V.~Lebedev, A.~V.~Malevskaya, S.~A.~Mintairov, M.~V.~Rakhlin, R.~A.~Salii, A.~M.~Mozharov, I.~S.~Mukhin, A.~M.~Mintairov

\paper Selective area epitaxy of InP/GaInP$_2$ quantum dots from metal-organic compounds

\jour Fizika i Tekhnika Poluprovodnikov

\yr 2023

\vol 57

\issue 8

\pages 620--623

\mathnet{http://mi.mathnet.ru/phts6932}

\elib{https://elibrary.ru/item.asp?id=64906765}

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https://www.mathnet.ru/eng/phts/v57/i8/p620

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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