Features of the phase transition in thin films of AgI superionic semiconductor

The paper considers the features of relaxation processes that characterize the phase transition in the superionic semiconductor AgI. Two maxima correspond to the relaxation of arrays of free electrons and positively charged silver ions were found on the spectra of the dielectric loss tangent and on the Cole–Cole diagrams. It is shown that the material under study is characterized by a temperature hysteresis, which is expressed in the lag in temperature of the reverse phase transition from the superionic phase to the semiconductor one.