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Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 1, Pages 134–138
DOI: https://doi.org/10.21883/FTP.2022.01.51824.9732 (Mi phts6983) 		 
Semiconductor physics

Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD

A. B. Chigineva, N. V. Baidus, S. M. Nekorkin, K. S. Zhidyaev, V. E. Kotomina, I. V. Samartsev

National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia
Full-text PDF (188 kB)
DOI: https://doi.org/10.21883/FTP.2022.01.51824.9732
Abstract: The effect of sulfide passivation (chemical treatment in a peroxide-sulfur etchant and in a solution of Na$_2$S in isopropanol) and complication of the profile of the lateral surface of thyristor mesastructures on the blocking ability of GaAs thyristor mesastructures is investigated. It is shown that the blocking voltage of the chips increases several times both after chemical treatment of the surface and with the complication of the surface topology.
Keywords: thyristors, blocking voltage, sulfide passivation, gallium arsenide, mesastructure.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation
In terms of development of technology of post-growth operations of the experimental samples the study was funded under the state assignment of the Lobachevsky State University of Nizhny Novgorod.
Received: 25.08.2021
Revised: 14.09.2021
Accepted: 14.09.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. B. Chigineva, N. V. Baidus, S. M. Nekorkin, K. S. Zhidyaev, V. E. Kotomina, I. V. Samartsev, “Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 56:1 (2022), 134–138
Citation in format AMSBIB
\Bibitem{ChiBaiNek22}
\by A.~B.~Chigineva, N.~V.~Baidus, S.~M.~Nekorkin, K.~S.~Zhidyaev, V.~E.~Kotomina, I.~V.~Samartsev
\paper Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2022
\vol 56
\issue 1
\pages 134--138
\mathnet{http://mi.mathnet.ru/phts6983}
\crossref{https://doi.org/10.21883/FTP.2022.01.51824.9732}
\elib{https://elibrary.ru/item.asp?id=48311699}
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