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Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 4, Pages 438–440
DOI: https://doi.org/10.21883/FTP.2022.04.52200.9768 (Mi phts7035) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor physics

Comparative study of photocells based on silicon doped with nickel by various methods

K. A. Ismailova, N. F. Zikrillaevb, S. V. Koveshnikovb, E. Zh. Kosbergenova

a Karakalpak State University, 230112 Nukus, Uzbekistan
b Tashkent State Technical University, 100095 Tashkent, Uzbekistan
Full-text PDF (102 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2022.04.52200.9768
Abstract: In this work, the parameters of silicon-based photocells doped with impurity nickel atoms by diffusion methods and during growth were compared. It was found that photocells doped with impurity nickel atoms during silicon growth have an improvement in parameters comparable to that obtained by the diffusion doping method. Additional heat treatment at $T$ = 800$^\circ$C makes it possible to significantly improve their basic parameters.
Keywords: silicon, photocell, nickel, thermal annealing, diffusion.
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. A. Ismailov, N. F. Zikrillaev, S. V. Koveshnikov, E. Zh. Kosbergenov, “Comparative study of photocells based on silicon doped with nickel by various methods”, Fizika i Tekhnika Poluprovodnikov, 56:4 (2022), 438–440
Citation in format AMSBIB
\Bibitem{IsmZikKov22}
\by K.~A.~Ismailov, N.~F.~Zikrillaev, S.~V.~Koveshnikov, E.~Zh.~Kosbergenov
\paper Comparative study of photocells based on silicon doped with nickel by various methods
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2022
\vol 56
\issue 4
\pages 438--440
\mathnet{http://mi.mathnet.ru/phts7035}
\crossref{https://doi.org/10.21883/FTP.2022.04.52200.9768}
\elib{https://elibrary.ru/item.asp?id=48411886}
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    • This publication is cited in the following 1 articles:
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