Comparative analysis of the efficiency of electroluminescence in type I and II heterostructures based on narrow-gap А$^{\mathrm{III}}$B$^{\mathrm{V}}$ compounds

A detailed analysis of the mechanisms of radiative and Auger recombination in type I and II heterostructures based on narrow-gap А$^{\mathrm{III}}$B$^{\mathrm{V}}$ materials is presented. It is shown that the presence of a heterointerface fundamentally changes the nature of these recombination processes differently, depending on the type of heterojunction. Results of our study of the electroluminescence of type I and II LED heterostructures based on InAs(Sb)/InAsSbP quantum wells are presented. It is shown that the increase in relative efficiency of radiative recombination in type II heterostructures due to suppression of Auger recombination contributes to generation of stimulated emission in these heterostructures at low temperatures (4.2–70 K).