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Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 5, Pages 498–501
DOI: https://doi.org/10.21883/FTP.2022.05.52353.9801
(Mi phts7046)
 

Micro- and nanocrystalline, porous, composite semiconductors

Growth, crystal structure and temperature dependence of the band gap of Cu$_2$ZnGeS$_4$ single crystals

I. V. Bondar'a, V. A. Yashchuka, V. N. Pavlovskiib, G. P. Yablonskiib

a Belarussian State University of Computer Science and Radioelectronic Engineering, 220013 Minsk, Belarus
b B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 220072 Minsk, Belarus
Abstract: Cu$_2$ZnGeS$_4$ single crystals were grown by chemical vapor transport reaction method. Their composition and crystal structure were determined. It was shown that the obtained single crystals crystallize in a tetragonal structure. The band gap of the obtained single crystals was determined basing on transmission spectrum in the region of the absorption edge in temperature range of 10–320 K. It was found that band gap width increases with decreasing of temperature.
Keywords: Bridgman method, single crystals, crystal structure, transmission spectrum, band gap.
Received: 29.12.2021
Revised: 19.01.2022
Accepted: 19.01.2022
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Bondar', V. A. Yashchuk, V. N. Pavlovskii, G. P. Yablonskii, “Growth, crystal structure and temperature dependence of the band gap of Cu$_2$ZnGeS$_4$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 56:5 (2022), 498–501
Citation in format AMSBIB
\Bibitem{BonYasPav22}
\by I.~V.~Bondar', V.~A.~Yashchuk, V.~N.~Pavlovskii, G.~P.~Yablonskii
\paper Growth, crystal structure and temperature dependence of the band gap of Cu$_2$ZnGeS$_4$ single crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2022
\vol 56
\issue 5
\pages 498--501
\mathnet{http://mi.mathnet.ru/phts7046}
\crossref{https://doi.org/10.21883/FTP.2022.05.52353.9801}
\elib{https://elibrary.ru/item.asp?id=48412066}
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