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Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 8, Pages 723–727
DOI: https://doi.org/10.21883/FTP.2022.08.53135.21 (Mi phts7091) 		 
This article is cited in 1 scientific paper (total in 1 paper)

XXVI International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 14 - March 17, 2022

Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands

M. N. Koryazhkina, D. O. Filatov, M. E. Shenina, I. N. Antonov, A. V. Kruglov, A. V. Ershov, A. P. Gorshkov, S. A. Denisov, V. Yu. Chalkov, V. G. Shengurov

National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia
Full-text PDF (206 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2022.08.53135.21
Abstract: The effect of optical radiation in the visible and near-infrared bands on resistive switching of a MOS stack based on ZrO$_2$(Y) film on an $n$-Si(001) substrate with self-assembled Ge nanoislands on its surface has been studied. An increase in the resistive switching logical gap was observed upon the photoexcitation, in particular, when the photon energies were smaller than the Si band gap. The effect was associated with the impact of the photo-emf at the Si/Ge/ZrO$_2$(Y) interface. In the latter case, the effect is associated with spatially indirect interband optical transitions in Ge nanoislands.
Keywords: memristor, photo-induced resistive switching, yttria-stabilized zirconia, MIS-structure, Ge/Si nanoislands.
Funding agency Grant number
Russian Science Foundation 22-22-00866
Ministry of Science and Higher Education of the Russian Federation 0729-2020-0058
The study was performed with support of RSF, No. 22-22-00866 (the growth of the heterostructures with the Ge/Si(001) nanoislands) and Ministry of Science and Higher Education of the Russian Federation within the project part of the state assignment of No. 0729-2020-0058 (the investigation of the influence of the photoexcitation on the resistive switching).
Received: 02.03.2022
Revised: 25.03.2022
Accepted: 25.03.2022
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. N. Koryazhkina, D. O. Filatov, M. E. Shenina, I. N. Antonov, A. V. Kruglov, A. V. Ershov, A. P. Gorshkov, S. A. Denisov, V. Yu. Chalkov, V. G. Shengurov, “Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 723–727
Citation in format AMSBIB
\Bibitem{KorFilShe22}
\by M.~N.~Koryazhkina, D.~O.~Filatov, M.~E.~Shenina, I.~N.~Antonov, A.~V.~Kruglov, A.~V.~Ershov, A.~P.~Gorshkov, S.~A.~Denisov, V.~Yu.~Chalkov, V.~G.~Shengurov
\paper Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2022
\vol 56
\issue 8
\pages 723--727
\mathnet{http://mi.mathnet.ru/phts7091}
\crossref{https://doi.org/10.21883/FTP.2022.08.53135.21}
\elib{https://elibrary.ru/item.asp?id=49223526 }
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