Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement

The electroluminescent characteristics of the InAs/InAs$_{1-y}$Sb$_y$/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region ($y >$ 0.09) in the temperature range 4.2–300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1–4.2 $\mu$m at low temperatures ($T <$ 30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered.