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Fizika i Tekhnika Poluprovodnikov, 2022, Volume 56, Issue 9, Pages 888–892
DOI: https://doi.org/10.21883/FTP.2022.09.53410.9885 (Mi phts7120) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Surface, interfaces, thin films

Calcium fluoride films with 2–10 nm thickness on Silicon-(111): growth, diagnostics, study of the through current transport

A. G. Banshchikov, M. I. Vexler, I. A. Ivanov, Yu. Yu. Illarionov, N. S. Sokolov, S. M. Suturin

Ioffe Institute, 194021 St. Petersburg, Russia
Full-text PDF (373 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2022.09.53410.9885
Abstract: Epitaxial calcium fluoride (CaF$_2$) layers with a nominal thickness up to 10 nm on the (111)-oriented Silicon (Si) are obtained. Surface topographies of the fluoride films are recorded and the current-voltage characteristics of the Au/CaF$_2$/Si structures are studied. On a qualitative level, these structures exhibited all the features usual for metal-insulator-semiconductor systems. The current-voltage curves of the samples were reproduced by modeling considering a finite (0.1–1 nm) value of the standard thickness deviation of the dielectric CaF$_2$ film.
Keywords: calcium fluoride, thin films, MIS structure, leakage current.
Funding agency Grant number
Russian Foundation for Basic Research 21-52-14007 АНФ_а
This study was supported by the Russian Foundation for Basic Research (project ANF a No. 21-52-14007).
Received: 12.05.2022
Revised: 30.06.2022
Accepted: 30.06.2022
English version:
Semiconductors, 2023, Volume 57, Issue 4, Pages 211–215
DOI: https://doi.org/10.1134/S1063782623070047
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. G. Banshchikov, M. I. Vexler, I. A. Ivanov, Yu. Yu. Illarionov, N. S. Sokolov, S. M. Suturin, “Calcium fluoride films with 2–10 nm thickness on Silicon-(111): growth, diagnostics, study of the through current transport”, Fizika i Tekhnika Poluprovodnikov, 56:9 (2022), 888–892; Semiconductors, 57:4 (2023), 211–215
Citation in format AMSBIB
\Bibitem{BanVexIva22}
\by A.~G.~Banshchikov, M.~I.~Vexler, I.~A.~Ivanov, Yu.~Yu.~Illarionov, N.~S.~Sokolov, S.~M.~Suturin
\paper Calcium fluoride films with 2--10 nm thickness on Silicon-(111): growth, diagnostics, study of the through current transport
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2022
\vol 56
\issue 9
\pages 888--892
\mathnet{http://mi.mathnet.ru/phts7120}
\crossref{https://doi.org/10.21883/FTP.2022.09.53410.9885}
\elib{https://elibrary.ru/item.asp?id=49607469}
\transl
\jour Semiconductors
\yr 2023
\vol 57
\issue 4
\pages 211--215
\crossref{https://doi.org/10.1134/S1063782623070047}
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  • https://www.mathnet.ru/eng/phts/v56/i9/p888
    • This publication is cited in the following 1 articles:
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