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Manufacturing, processing, testing of materials and structures
Growth of hexagonal boron nitride (hBN) on silicon carbide substrates by the physical vapor transport method
E. N. Mokhov, V. Yu. Davydov, A. N. Smirnov, S. S. Nagalyuk Ioffe Institute, 194021 St. Petersburg, Russia
Abstract:
The possibility of growing hexagonal boron nitride (hBN) of high structural perfection on hexagonal silicon carbide (SiC) substrates using the physical vapor transport method is demonstrated. The results obtained indicate that this method is promising for the formation of large-area high-quality hBN/SiC heterostructures in the course of one technological process, which have a high potential for device applications.
Keywords:
hexagonal boron nitride, high-temperature sublimation from the gas phase, Raman spectroscopy, photoluminescence.
Received: 15.09.2022 Revised: 23.09.2022 Accepted: 26.09.2022
Citation:
E. N. Mokhov, V. Yu. Davydov, A. N. Smirnov, S. S. Nagalyuk, “Growth of hexagonal boron nitride (hBN) on silicon carbide substrates by the physical vapor transport method”, Fizika i Tekhnika Poluprovodnikov, 56:10 (2022), 1011–1015
Linking options:
https://www.mathnet.ru/eng/phts7140 https://www.mathnet.ru/eng/phts/v56/i10/p1011
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