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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 1, Pages 3–5 (Mi phts7173)  
This article is cited in 2 scientific papers (total in 2 papers)

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

D. A. Pavlova, N. V. Baidusb, A. I. Bobrova, O. V. Vikhrovab, E. I. Volkovaa, B. N. Zvonkovb, N. V. Malekhonovaa, D. S. Sorokina

a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (727 kB) Citations (2)
Abstract: The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs$_x$ P$_{1-x}$ layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a local isovalent phosphorus impurity.
Received: 23.05.2014
Accepted: 15.06.2014
English version:
Semiconductors, 2015, Volume 49, Issue 1, Pages 1–3
DOI: https://doi.org/10.1134/S1063782615010182
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. A. Pavlov, N. V. Baidus, A. I. Bobrov, O. V. Vikhrova, E. I. Volkova, B. N. Zvonkov, N. V. Malekhonova, D. S. Sorokin, “Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 3–5; Semiconductors, 49:1 (2015), 1–3
Citation in format AMSBIB
\Bibitem{PavBaiBob15}
\by D.~A.~Pavlov, N.~V.~Baidus, A.~I.~Bobrov, O.~V.~Vikhrova, E.~I.~Volkova, B.~N.~Zvonkov, N.~V.~Malekhonova, D.~S.~Sorokin
\paper Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 1
\pages 3--5
\mathnet{http://mi.mathnet.ru/phts7173}
\elib{https://elibrary.ru/item.asp?id=24195055}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 1
\pages 1--3
\crossref{https://doi.org/10.1134/S1063782615010182}
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  • https://www.mathnet.ru/eng/phts/v49/i1/p3
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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