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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 1, Pages 11–14 (Mi phts7175)  
This article is cited in 2 scientific papers (total in 2 papers)

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

N. V. Dikarevaa, O. V. Vikhrovaa, B. N. Zvonkova, N. V. Malekhonovab, S. M. Nekorkina, A. V. Pirogovb, D. A. Pavlovb

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (703 kB) Citations (2)
Abstract: Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500–570$^\circ$C. The structural quality of the samples and the quality of heterointerfaces of the quantum wells are studied by the high-resolution transmission electron microscopy of cross sections. The emission properties of the heterostructures are studied by photoluminescence measurements. The structures are subjected to thermal annealing under conditions chosen in accordance with the temperature and time of growth of the upper cladding $p$-InGaP layer during the formation of GaAs/InGaP laser structures with an active region containing quantum-confined GaAsSb layers. It is found that such heat treatment can have a profound effect on the emission properties of the active region, only if a bilayer GaAsSb/InGaAs quantum well is formed.
Received: 23.05.2014
Accepted: 15.06.2014
English version:
Semiconductors, 2015, Volume 49, Issue 1, Pages 9–12
DOI: https://doi.org/10.1134/S1063782615010054
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Dikareva, O. V. Vikhrova, B. N. Zvonkov, N. V. Malekhonova, S. M. Nekorkin, A. V. Pirogov, D. A. Pavlov, “Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 11–14; Semiconductors, 49:1 (2015), 9–12
Citation in format AMSBIB
\Bibitem{DikVikZvo15}
\by N.~V.~Dikareva, O.~V.~Vikhrova, B.~N.~Zvonkov, N.~V.~Malekhonova, S.~M.~Nekorkin, A.~V.~Pirogov, D.~A.~Pavlov
\paper Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 1
\pages 11--14
\mathnet{http://mi.mathnet.ru/phts7175}
\elib{https://elibrary.ru/item.asp?id=24195057}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 1
\pages 9--12
\crossref{https://doi.org/10.1134/S1063782615010054}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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