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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 1, Pages 41–46
(Mi phts7181)
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This article is cited in 2 scientific papers (total in 2 papers)
XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014
Energy spectrum and transport in narrow HgTe quantum wells
A. V. Germanenko, G. M. Minkov, O. E. Rut, A. A. Sherstobitov, S. A. Dvoretskii, N. N. Mikhailov
Abstract:
The results of an experimental study of the transport phenomena and the hole energy spectrum of two-dimensional systems in the quantum well of HgTe zero-gap semiconductor with normal arrangement of quantum-confinement subbands are presented. An analysis of the experimental data allows us to reconstruct the carrier energy spectrum near the hole subband extrema. The results are interpreted using the standard kP model.
Received: 23.05.2014 Accepted: 15.06.2014
Citation:
A. V. Germanenko, G. M. Minkov, O. E. Rut, A. A. Sherstobitov, S. A. Dvoretskii, N. N. Mikhailov, “Energy spectrum and transport in narrow HgTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 41–46; Semiconductors, 49:1 (2015), 39–43
Linking options:
https://www.mathnet.ru/eng/phts7181 https://www.mathnet.ru/eng/phts/v49/i1/p41
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