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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 1, Pages 98–101 (Mi phts7191)  
This article is cited in 7 scientific papers (total in 7 papers)

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

Epitaxial growth of hexagonal silicon polytypes on sapphire

D. A. Pavlov, A. V. Pirogov, N. O. Krivulin, A. I. Bobrov

Lobachevsky State University of Nizhny Novgorod
Full-text PDF (2030 kB) Citations (7)
Abstract: The formation of a single-crystal silicon polytype is observed in silicon-on-sapphire structures by high-resolution transmission electron microscopy. The appearance of inclusions with a structure different from that of diamond is attributed to the formation of strong-twinning regions and the aggregation of stacking faults, which form their own crystal structure in the crystal lattice of silicon. It is demonstrated that the given modification belongs to the $9R$ silicon polytype.
Received: 23.05.2014
Accepted: 15.06.2014
English version:
Semiconductors, 2015, Volume 49, Issue 1, Pages 95–98
DOI: https://doi.org/10.1134/S1063782615010194
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. A. Pavlov, A. V. Pirogov, N. O. Krivulin, A. I. Bobrov, “Epitaxial growth of hexagonal silicon polytypes on sapphire”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 98–101; Semiconductors, 49:1 (2015), 95–98
Citation in format AMSBIB
\Bibitem{PavPirKri15}
\by D.~A.~Pavlov, A.~V.~Pirogov, N.~O.~Krivulin, A.~I.~Bobrov
\paper Epitaxial growth of hexagonal silicon polytypes on sapphire
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 1
\pages 98--101
\mathnet{http://mi.mathnet.ru/phts7191}
\elib{https://elibrary.ru/item.asp?id=24195073}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 1
\pages 95--98
\crossref{https://doi.org/10.1134/S1063782615010194}
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  • https://www.mathnet.ru/eng/phts/v49/i1/p98
    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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