Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

The possibility of using the laser deposition method to grow crystalline light-emitting structures with GaAsSb/GaAs quantum wells (QWs) is experimentally demonstrated for the first time. The growth temperature of the GaAs$_{1-x}$Sb$_x$ layers is varied within the range 450–550$^\circ$C; according to X-ray diffraction analyses, the content of antimony reaches $x_{\mathrm{Sb}}\approx$ 0.37 at a growth temperature of 450$^\circ$C. Low-temperature (4 K) photoluminescence spectroscopy demonstrates the presence of a peak associated with the GaAsSb/GaAs QW at around 1.3 $\mu$m at the minimum laser-light pumping level. The optimal growth temperature $T_g$ = 500$^\circ$C and arsine flow rate $P_A$ = 2.2 $\times$ 10$^{-8}$ mol/s at which the best emission properties of QWs with $x_{\mathrm{Sb}}\sim$ 0.17–0.25 are observed at temperatures of 77 and 300 K are determined. It is shown that GaAsSb/GaAs QWs with similar parameters (width and composition) grown by laser deposition at 500$^\circ$C and metal-organic vapor-phase epitaxy at 580°C have comparable optical quality.