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Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 2, Pages 149–154
(Mi phts7202)
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This article is cited in 5 scientific papers (total in 5 papers)
XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014
Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well
P. S. Vergelesa, E. B. Yakimovab a Institute of Microelectronics Technology and High-Purity Materials RAS
b National University of Science and Technology «MISIS», Moscow
Abstract:
Data on the temperature dependence of the cathodoluminescence intensity in multiple InGaN/GaN quantum-well structures in the temperature range 80–300 K are reported. Unirradiated structures and structures irradiated with electrons with subthreshold energy are studied. It is shown that, upon irradiation, the temperature dependence becomes weaker. From analysis of the results obtained in this study and previously, it can be suggested that electron irradiation initiates the relaxation of strains produced in quantum wells due to the InGaN-GaN lattice mismatch.
Received: 23.05.2014 Accepted: 16.06.2014
Citation:
P. S. Vergeles, E. B. Yakimov, “Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 149–154; Semiconductors, 49:2 (2015), 143–148
Linking options:
https://www.mathnet.ru/eng/phts7202 https://www.mathnet.ru/eng/phts/v49/i2/p149
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