Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 2, Pages 175–178 (Mi phts7207)  

XVIII Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 10-14, 2014

An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

V. Ya. Aleshkinab, N. V. Dikarevac, A. A. Dubinovab, B. N. Zvonkovc, K. E. Kudryavtsevab, S. M. Nekorkinc

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract: A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.
Received: 23.05.2014
Accepted: 16.06.2014
English version:
Semiconductors, 2015, Volume 49, Issue 2, Pages 170–173
DOI: https://doi.org/10.1134/S1063782615020025
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, K. E. Kudryavtsev, S. M. Nekorkin, “An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 175–178; Semiconductors, 49:2 (2015), 170–173
Citation in format AMSBIB
\Bibitem{AleDikDub15}
\by V.~Ya.~Aleshkin, N.~V.~Dikareva, A.~A.~Dubinov, B.~N.~Zvonkov, K.~E.~Kudryavtsev, S.~M.~Nekorkin
\paper An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 2
\pages 175--178
\mathnet{http://mi.mathnet.ru/phts7207}
\elib{https://elibrary.ru/item.asp?id=24195089}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 2
\pages 170--173
\crossref{https://doi.org/10.1134/S1063782615020025}
Linking options:
  • https://www.mathnet.ru/eng/phts7207
  • https://www.mathnet.ru/eng/phts/v49/i2/p175
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025