Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in $p$-Si:B

A theoretical model developed for interpretation of the results of measurements of the impurity-photoconductivity relaxation in $p$-Si:B under pulsed optical excitation by a narrow-band tunable source of radiation in “heating” (10–500 V/cm) electric fields is presented. The model takes into account the capture of holes at the ground and lower excited states of boron with optical-phonon emission. It is shown that the dependence of the photoconductivity-relaxation time on the electric-field intensity can be unsteady taking into account these processes.