Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 3, Pages 307–313 (Mi phts7228)  
This article is cited in 3 scientific papers (total in 3 papers)

Spectroscopy, interaction with radiation

Positronics of radiation-induced effects in chalcogenide glassy semiconductors

O. Shpotyukab, S. A. Kozyukhincd, M. Shpotyukae, A. Ingramf, R. Szatanikg

a Karat Scientific and Production Enterprise, L'vov
b Jan Dlugosz University, Czestochowa, 42200, Poland
c Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow
d Tomsk State University
e Lviv Polytechnic National University
f Opole University of Technology, Opole, 45370, Poland
g Opole University, Opole, 45040, Poland
Full-text PDF (726 kB) Citations (3)
Abstract: Using As$_2$S$_3$ and AsS$_2$ glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.
Received: 15.04.2014
Accepted: 22.04.2014
English version:
Semiconductors, 2015, Volume 49, Issue 3, Pages 298–304
DOI: https://doi.org/10.1134/S1063782615030197
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. Shpotyuk, S. A. Kozyukhin, M. Shpotyuk, A. Ingram, R. Szatanik, “Positronics of radiation-induced effects in chalcogenide glassy semiconductors”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 307–313; Semiconductors, 49:3 (2015), 298–304
Citation in format AMSBIB
\Bibitem{ShpKozShp15}
\by O.~Shpotyuk, S.~A.~Kozyukhin, M.~Shpotyuk, A.~Ingram, R.~Szatanik
\paper Positronics of radiation-induced effects in chalcogenide glassy semiconductors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2015
\vol 49
\issue 3
\pages 307--313
\mathnet{http://mi.mathnet.ru/phts7228}
\elib{https://elibrary.ru/item.asp?id=24195110}
\transl
\jour Semiconductors
\yr 2015
\vol 49
\issue 3
\pages 298--304
\crossref{https://doi.org/10.1134/S1063782615030197}
Linking options:
  • https://www.mathnet.ru/eng/phts7228
  • https://www.mathnet.ru/eng/phts/v49/i3/p307
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025